扫描二维码关注“博士后招聘网”微信订阅号或微信搜一搜“博士后招聘网”关注我们。
当前位置: 博士后招聘网 > 国外博士后招聘 > 英国剑桥大学氮化镓中心2024年招聘博士后职位

英国剑桥大学氮化镓中心2024年招聘博士后职位

信息来源:英国剑桥大学氮化镓中心 | 作者:admin | 时间:2024-04-01 10:35

英国剑桥大学氮化镓中心2024年招聘博士后职位

剑桥大学(University of Cambridge),简称剑桥,是一所坐落于英国剑桥郡剑桥市采用传统学院制的顶尖研究型大学。学校是罗素大学集团、全球大学校长论坛、全球大学高研院联盟、国际应用科技开发协作网、剑桥大学医疗伙伴联盟成员,衍育了科技聚集地“硅沼(Silicon Fen)”,被誉为“金三角名校”、“G5超级精英大学”。

Post-doctoral Research Associate ¿ MOVPE Growth of Nitride Materials for Power Electronics

University of Cambridge

United Kingdom

April 22, 2024

Contact:N/A

Offerd Salary:£29,605-£44,263

Location:N/A

Working address:N/A

Contract Type:Other

Working Time:Negotigation

Working type:N/A

Ref info:N/A

Post-doctoral Research Associate ¿ MOVPE Growth of Nitride Materials for

Power Electronics

A talented and creative postdoctoral researcher is seeking to work in the Cambridge Centre for Gallium Nitride, performing growth of nitride materials and devices for applications in power electronics and characterising the resulting materials. The Cambridge Centre for Gallium Nitride is part of the Department of Materials Science and Metallurgy at the University of Cambridge and also leads the nitride activity within the EPSRC National Epitaxy Facility.

This post is available under the UltrAlGaN Programme Grant (EPSRC) in collaboration with the University of Bristol and other partners. The broad objective of the Programme is the development of high-performance AlGaN solid- state circuit breakers (SSCBs). In this context, the successful candidate will contribute to research on the growth of aluminium and nitrogen-polar AlGaN, the growth of graded AlGaN layers, the regrowth of AlGaN, the growth on bulk AlN substrates, and the realisation of new doping concepts in AlGaN, in particular polarisation doping. The project team also includes the capability for growth by molecular beam epitaxy (MBE), and the successful candidate will exhibit enthusiasm for collaboration across the two growth technologies to achieve optimised materials. The role may also present the opportunity for basic device fabrication to facilitate epitaxy characterisation, and hence experience of device fabrication is desirable.

Responsibilities: - Manage research activities, generate high-quality data, and develop scientific techniques. - Contribute intellectually to the direction of the nitride research within the Centre. - Present data locally at lab meetings and seminars, and more widely at international scientific conferences. - Draft scientific manuscripts with support from Prof Oliver and contribute to the day-to-day supervision of Masters or PhD students.

Requirements: - Hold a Ph.D. in Materials Science, Physics, Electrical Engineering, or a related area, or be nearing completion of one. - Extensive experience in crystal growth, preferably using metal-organic vapour phase epitaxy (MOVPE). - A track record of research on nitride semiconductors or closely related materials. - Well-versed in a range of techniques for the characterisation of the structure and properties of materials, with experience in two or more of the following techniques: scanning probe microscopy, x-ray diffraction, scanning electron microscopy, cathodoluminescence spectroscopy, photoluminescence spectroscopy, transmission electron microscopy, Hall probe measurements, or C-V measurements. Candidates with in-depth expertise in scanning probe microscopy are particularly encouraged to apply. - Skills in data presentation, both verbally and in writing. - Committed to collaborative and interdisciplinary research and able to work both independently and as part of a team.

Additional Information: - Applications are particularly welcome from women, black, and minority ethnic candidates. - Fixed-term: The funds for the role are available for 2 years in the first instance.

For more information about the Cambridge Centre for Gallium Nitride, visit https: // www. gan.msm.cam.ac.uk/.

Click the 'Apply' button below to register an account with our recruitment system (if you have not already) and apply online.

We reserve the right to fill the position with a qualified candidate prior to the conclusion of the advertising period-

Please quote reference LJ40992 on your application and in any correspondence about this vacancy.

The University actively supports equality, diversity and inclusion and encourages applications from all sections of society.

The University has a responsibility to ensure that all employees are eligible to live and work in the UK.

Further information

· FP- UltraAIGaNDepartment/Location

Department of Materials Science and Metallurgy

Salary

£29,605-£44,263

Reference

LJ40992

Category

Research

Published

21 March 2024

Closing date

22 April 2024

更多最新博士后招聘信息请关注博士后招聘网微信公众号(ID:boshihoujob)

祝君:学业有成、学成归来

请您在邮件申请时在标题注明信息来自:博士后招聘网-boshihoujob.com,电话咨询时说明从博士后招聘网(www.boshihoujob.com)看到的博士后招聘信息。

声明:凡本网注明“来源:XXX”的文/图等稿件,本网转载出于传递更多信息及方便产业探讨之目的,并不意味着本站赞同其观点或证实其内容的真实性,文章内容仅供参考。如其他媒体、网站或个人从本网站转载使用,须保留本网站注明的“来源”,并自负版权等法律责任。作者如果不希望被转载或者联系转载等事宜,请与我们联系。邮箱:boshihoujob@163.com。

博士后招聘网微信公众号

博士后招聘网微信公众号

扫描二维码关注公众号,ID:boshihoujob

发布博士后招聘信息 加入博士人才库

博士&博士后社群

  • 博士后招聘1号群
    799173148

  • 博士后招聘2号群
    373726562

  • 哲学博士群
    934079716

  • 经济学博士群
    945762011

  • 法学博士群
    934096817

  • 教育学博士群
    934118244

  • 文学博士群
    934106321

  • 历史学博士群
    945803407

  • 理学博士群
    934102752

  • 工学博士群
    945827064

  • 农学博士群
    114347294

  • 医学博士群
    729811942

  • 管理学博士群
    797229360

Copyright©2018-2024 博士后招聘网(boshihoujob.com) 版权所有 皖公网安备 34070202000340号

www.boshihoujob.com 皖ICP备18007485号-1

本网站所有资讯内容、广告信息,未经书面同意,不得转载。

博士后招聘网(www.boshihoujob.com)专注服务于海内外博士后研究人员。

博士后招收信息发布请联系邮箱boshihoujob@163.com,QQ:878065319,微信号:bshjob001。
联系时请注明单位名称(如:单位名称+博士后招收信息发布)。